SOI DEVICE SIMULATION OF AN AREA EFFICIENT BODY CONTACT
Keywords:
Three-Dimensional Simulation - Floating Body Effects - On-resistance - Breakdown Voltage - Isothermal Drift-Diffusion Model – Cutoff Frequency.
Abstract
We have used three-dimensional simulation to investigate application of a new body contact to SOI devices. Performance characteristics of the new body contact on high-voltage SOI devices were studied. Our comparative investigation showed increased current drive, improved cutoff frequency, reduced on-resistance while attaining satisfactory breakdown voltage. The new body contact is applicable to both high and low voltage SOI MOSFETs.
Published
2009-06-08
How to Cite
Daghighi, A., & A. Osman. (2009). SOI DEVICE SIMULATION OF AN AREA EFFICIENT BODY CONTACT . Majlesi Journal of Electrical Engineering, 1(1), 63-66. https://doi.org/https://doi.org/10.1234/mjee.v1i1.52
Issue
Section
Articles