SOI DEVICE SIMULATION OF AN AREA ‎EFFICIENT BODY CONTACT ‎

  • Arash Daghighi
  • ‎Mohamed A. Osman‎
DOI: https://doi.org/10.1234/mjee.v1i1.52
Keywords: Three-Dimensional Simulation - Floating Body Effects - On-resistance - Breakdown Voltage - ‎Isothermal Drift-Diffusion Model – Cutoff Frequency.‎

Abstract

We have used three-dimensional simulation to investigate application of a new body contact to SOI devices. Performance characteristics of the new body contact on high-voltage SOI devices were studied. Our comparative investigation showed increased current drive, improved cutoff frequency, reduced on-resistance while attaining satisfactory breakdown voltage. The new body contact is applicable to both high and low voltage SOI MOSFETs.     
Published
2009-06-08
How to Cite
Daghighi, A., & A. Osman‎‎. (2009). SOI DEVICE SIMULATION OF AN AREA ‎EFFICIENT BODY CONTACT ‎. Majlesi Journal of Electrical Engineering, 1(1), 63-66. https://doi.org/https://doi.org/10.1234/mjee.v1i1.52
Issue
Vol 1 No 1 (2007): June
Section
Articles