Low Power Broadband sub-GHz CMOS LNA with 1 GHz Bandwidth for IoT Applications

  • Sayed Vahid Mir-Moghtadaei Shahrekor University
  • Farshad Shirani Bidabadi Shahrekor University
Keywords: Sub-GHz CMOS LNA, Broadband LNA, Low Power, IoT


This paper presents a broadband low-power CMOS low noise amplifier (LNA) in 130 nm technology for sub-GHz Internet of Things (IoT) applications. The proposed circuit consists of a current reuse common source amplifier (CSA) in the forward path, and a positive simple transconductance amplifier (PSTA) in the feedback path. Theoretical calculation of the input admittance shows a positive part that presents a parallel inductance. This equivalent parallel inductance in the input can cancel out the input capacitance of CSA and electrostatic discharge (ESD) pad, enhancing the frequency bandwidth in the sub-GHz frequency band. Post-layout simulated including ESD pads and package model in 130 nm CMOS technology, LNA achieves a voltage gain of 16.5 dB in a frequency bandwidth of 50 MHz to 1.1 GHz, noise figure (NF) of less than 2.4 dB, input return loss (S11) of -11 dB, input third order intercept point (IIP3) of -11 dBm and 1 mW power consumption from a 1 V power supply, showing a good figure of merit compared to other works. The occupied core area is less than 0.002 mm2.

Author Biography

Farshad Shirani Bidabadi, Shahrekor University
Department of technology and engineering, Shahrekord, Iran


1. O’Dea., Global LPWAN Connections 2017–2023, by Technology. 2021. Available online: https://www.statista.com/statistics/88 0822/lpwan-ic-market-share-by-technology/ (accessed on 12 September 2021). 2021.
2. Ayoub, W., et al., Internet of mobile things: Overview of lorawan, dash7, and nb-iot in lpwans standards and supported mobility. IEEE Communications Surveys & Tutorials, 2018. 21(2): p. 1561-1581.
3. Herrero, R., Fundamentals of IoT Communication Technologies. 2022: Springer.
4. Wu, J., et al., A 2.4 GHz 87 μ W low-noise amplifier in 65 nm CMOS for IoT applications. Modern Physics Letters B, 2021. 35(32): p. 2150485.
5. Hojat, S.Y., H.F. Baghtash, and E.N. Aghdam. A 350μW Low Noise Amplifier for IOT Applications. in 2021 Iranian International Conference on Microelectronics (IICM). 2021. IEEE.
6. Gladson, S.C., et al., A 219-µW ultra-low power low-noise amplifier for IEEE 802.15. 4 based battery powered, portable, wearable IoT applications. SN Applied Sciences, 2021. 3(4): p. 1-18.
7. Yi, K.S., S.A.Z. Murad, and S. Mohyar. A study and analysis of high efficiency CMOS power amplifier for IoT applications. in Journal of Physics: Conference Series. 2021. IOP Publishing.
8. Nejadhasan, S., et al., PVT‐compensated low‐voltage and low‐power CMOS LNA for IoT applications. International Journal of RF and Microwave Computer‐Aided Engineering, 2020. 30(11): p. e22419.
9. Hanae, E., A.T. Naima, and E. Taj-eddin, 2.3–21 GHz broadband and high linearity distributed low noise amplifier. Integration, 2021. 76: p. 61-68.
10. Qian, Y., S. Wang, and S. Diao. A Low Power Inductorless Wideband Low Noise Amplifier. in 2019 12th International Congress on Image and Signal Processing, BioMedical Engineering and Informatics (CISP-BMEI). 2019. IEEE.
11. Li, Z., et al., A 0.5 to 6 GHz wideband cascode LNA with enhanced linearity by employing resistive shunt‐shuntfeedback and derivative superposition. Microwave and Optical Technology Letters, 2020. 62(10): p. 3157-3162.
12. Singh, V., S.K. Arya, and M. Kumar, A Common-Gate Current-Reuse UWB LNA for Wireless Applications in 90 nm CMOS. Wireless Personal Communications, 2021. 119(2): p. 1405-1423.
13. Bidabadi, F.S. and S.V. Mir-Moghtadaei, An Ultra-Wideband 0.1–6.1 GHz Low Noise Amplifier in 180 nm CMOS Technology. Journal of Circuits, Systems and Computers, 2021. 30(06): p. 2150104.
14. Lin, S.-C., et al. A broadband low noise amplifier for high performance wireless microphones. in 2019 International Symposium on Intelligent Signal Processing and Communication Systems (ISPACS). 2019. IEEE.
15. Kim, S. and K. Kwon, Broadband Balun-LNA Employing Local Feedback g m-Boosting Technique and Balanced Loads for Low-Power Low-Voltage Applications. IEEE Transactions on Circuits and Systems I: Regular Papers, 2020. 67(12): p. 4631-4640.
16. Chang, C.-H. and M. Onabajo, Analysis and demonstration of an IIP3 improvement technique for low-power RF low-noise amplifiers. IEEE Transactions on Circuits and Systems I: Regular Papers, 2018. 65(3): p. 859-869.
17. Aydoğdu, A., et al., A 2.55-mW on-chip passive balun-LNA in 180-nm CMOS. Analog Integrated Circuits and Signal Processing, 2022. 111(2): p. 223-234.
18. Roobert, A.A. and D.G.N. Rani, Design and analysis of 0.9 and 2.3‐GHz concurrent dual‐band CMOS LNA for mobile communication. International Journal of Circuit Theory and Applications, 2020. 48(1): p. 1-14.
19. Shi, J., et al. A 0.1-3.4 GHz LNA with Multiple Feedback and Current-Reuse Technique based on 0.13-μm SOI CMOS. in 2019 IEEE MTT-S International Wireless Symposium (IWS). 2019. IEEE.
How to Cite
Mir-Moghtadaei, S. V., & Shirani Bidabadi, F. (2022). Low Power Broadband sub-GHz CMOS LNA with 1 GHz Bandwidth for IoT Applications. Majlesi Journal of Electrical Engineering. Retrieved from http://mjee.iaumajlesi.ac.ir/index/index.php/ee/article/view/4746