Simulation of the Process of LDMOS Transistor Manufacture and Optimizing it to Increase the Current of Work

  • Payman Bahrami Department of Electrical Engineering, Yazd Branch, Islamic Azad University, Yazd, Iran
  • Mohammad Reza Shayesteh Department of Electrical Engineering, Yazd Branch, Islamic Azad University, Yazd, Iran
  • Mohammad Eslami Department of Electrical Engineering, Yazd Branch, Islamic Azad University, Yazd, Iran
Keywords: LDMOS transistor, Current operating point, Threshold voltage, Cut-off frequency, Transconductance, Breakdown voltage.

Abstract

This paper presents the simulation of the process of LDMOS transistor manufacturing by using Silvaco software and by relying on the ability of calculating the basic parameters of transistor dependencies, focusing on the optimization of the manufacturing process in order to increase the current of work. The simulation of manufacturing process of this type of transistor which is a base for its real manufacturing is of the utmost importance. By using this simulation and reviewing each parameter, we can achieve the optimized manufacturing process by focusing each basic parameter and by paying attention to its required application. In order to design, we first define the construction procedures and the necessary processes using the Athena simulator, and then we use the Atlas device simulator to acquire electrical parameters.

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Published
2017-12-04
How to Cite
Bahrami, P., Shayesteh, M. R., & Eslami, M. (2017). Simulation of the Process of LDMOS Transistor Manufacture and Optimizing it to Increase the Current of Work. Majlesi Journal of Electrical Engineering, 11(4), 37-43. Retrieved from http://mjee.iaumajlesi.ac.ir/index/index.php/ee/article/view/2277
Section
Articles